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Different substrate conditions on the performance of MEMS piezoresistive sensors


Injected dose to achieve the design requirements of Article piezoresistive. For piezoresistive area (P a district), A and B began to spread after injection of the sheet resistance difference is small, and in the subsequent differences in the thermal process increases. This is due to injection of the further spread of impurities at high temperature, the substrate doped piezoresistive area sheet resistance in Table 3 P-N injected into the forward box after box, after advancing a region resistance P-bit resistor-bit 215.000340.000B217.000320. Oo00.3030-300 Table 4 P-piezoresistive resistor leads into the forward area after box after box N region resistance into the position to promote resistance bit 19.121.4B19-321.422-526.7 Table 5 zone protection frame N + implantation to promote resistance 12.700B16.4000-310 after the sheet resistance of the hybrid after the impurity concentration on the distribution of diffusion to increase. For the extraction area (area), because the injected dose, the larger the substrate doping concentration, substrate doping effect is relatively small,[link widoczny dla zalogowanych], so the A # and B leads to area (area) of the sheet resistance difference is small. 4 Conclusion I found in practice, different substrate concentration on the piezoresistive MEMS sensor performance has been affected. This design 3 different substrate conditions, making the device the experiment. After the sheet resistance of the piezoresistive area after the thermal process in all measurements can be seen from Table 5, B A # than the more commonly used in the design of the expected results. The results have been used to guide the actual production. References: [1] HiroyukiFujita. Microactuaorsandmicromachines [J]. ProceedingsoftheIEEE, 1998,86 ( :1721-1732. [2] Qing-An Huang. Silicon micromachining technology [M]. Beijing: Science Press, 1996. HuangQingan. SiliconMicro-MachiningTechnologylM]. Beijing: SciencePress, 1996 (inChinese). [3] Zhang Xing, Huang Ru, Liu Xiaoyan. Introduction to Microelectronics [M]. Beijing: Peking University Press, 2000. ZhangXing, HuangRu, LiuXiaoyan. IntroductiontoMicroelectronics [M]. Beijing: PekingUniversityPress, 2000 (inChinese). [4] PlazaJos6A, ColladoAna, CabrujaEnfic,[link widoczny dla zalogowanych], eta1. PiezoresistiveaccelerometersforMCM-packagelJJ. JournalofMicroelectromechanicalSystems, 2005,14 (4) :794-801. [5] Zeng Zhaojun, Shi Jinjie. A micro-accelerometer overload Kang Da study [J]. Nanotechnology and Precision Engineering, 2003 (7 / :281-283, 288. ZengZhaojun, ShiJinjie. Anovelpiezoresistiveaccel a erometerwithhighaccuracyandoverloadabintylJ]. MicronanoelectronicTechnology, 2003 (7 / :281-283, 288 (inChinese). [6] Qixiao Jin, Liu, Shi Yunbo. Micro-g accelerometer with high values of the design [J]. Sensors and micro systems, 2006,25 (10) :60-63. QiXiaojin, LiuJun, ShiYunbo. Designofhighgmicro-accelerometerlJJ. TransducerandMicrosystemTechn-ologies,[link widoczny dla zalogowanych], 2006,[link widoczny dla zalogowanych],25 (10) :60-630nChinese). 17JToshiyukiTofiyama. AnalysisofpiezoresistanceinP-typesificonformechanicalsensorslJJ. JournalofMicroelectromechanicalSystems, 2002,11 (5) :598-604.

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