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 Wysłany: Sob 14:47, 04 Gru 2010 Temat postu: tory burch MWPCVD Diamond Films and stable operati |
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MWPCVD Diamond Films unit stable operation of power
The expansion by the high voltage power supply output has now reached 5.5kw,[link widoczny dla zalogowanych], output power of the microwave magnetron at this time has reached 3. Okw a microwave input power the device up to 3.0kw at the time of continuous and stable operation for more than 30h, to meet the needs of Diamond Films. 3 experimental application of the diamond film deposition equipment, the N-type [100 silicon substrate of diamond film deposition on experimental substrates was enhanced nucleation pretreatment of the diamond powder with particle size W0.5 alcohol ultrasonic suspension , using the reaction of HI gas is diluted with CH. In the microwave input power of 1.0 ~ 30kW, CH concentration of 0.5% to 5%,[link widoczny dla zalogowanych], gas flow 100em deposition pressure is 4.0 ~ 9.6kPa. Substrate temperature of 700 ~ 1100 ℃ in the process conditions, are able to deposit a layer of silicon chip of diamond film. Figure 5 (a) and (b) films were deposited by the Raman spectra and SEM photographs (deposition conditions: microwave input power 1.8kW.CH concentration of 1%, gas flow 100emS, deposition pressure 6.5kPa, the base chip temperature of 850 ℃, deposition time 12h), Raman spectroscopy is very strong in the diamond characteristic peak at 1332cm, and at 1550em at spj and s by a mixture of hybrid non-key box the characteristics of diamond phase carbon peak is very broad weak, indicating that the deposited film contains a large number of ounces of diamond; SEM images show particles deposited diamond films uniform and compact in size between the 1.5 ~ 2.5m, and a certain orientation, that of diamond deposited film quality is good. : Cb】 National 5 deposition film ~ arrJatl spectrum and SEM pictures 【a} cb} 4 Institute of Plasma Physics,[link widoczny dla zalogowanych], Chinese Academy of Sciences has concluded successfully developed a water-cooled reaction chamber MWPCVD Diamond Films device. At present, the device when microwave input power 3Okw long and stable operation. L in the silicon wafer of diamond film deposited References: 『1] Detjagu [nBVFedcseevI] BSolA. 】 975.233l5: 102l2KanloM,[link widoczny dla zalogowanych], SatoY. Matatlnl {) toS,[link widoczny dla zalogowanych], eta 【J ('r3, rta] Gro ~ th.1983.62 (3): 642 [3] Lu Ao waste. Wu worship vacuum and low temperature,】 997,3 (2): 744] Wu Ming Man. Mao Xiuhua Microwave Technology, Shaanxi: Northwest Telecommunications Engineering Institute Publishing House .1987 l82: 5] Lebedev book, Han Jiarui. Baoxian Jie translation of microwave electronics Beijing: National Defence Industry Press .1982281 [6, Xu Fang Shengyan Modern Control Engineering, Beijing: Science Press Club 198】 StudyofSteadyOperationoftheMWPCVDApparatusforDiamondFilmsDepositiononHeavy-DutyShuXingsheng.WuQinchong (InstituteofPlasmaPhysics.ChineseAcademyofSciences, Hefei230031) AbstractThesetlJPandtheoperationtheoryofthereactionchamberwater-cooledMWPCVDapparatusfordiamondfilmsdepositi. nisconciselypresenled.andthemethodforitssteadyoperationonheavy-dutyforatongperiodoftime1semphaticaItvdiscussed.TheMWPCVDapparatuscallsteadilyoperateforalongperiodoftimeonthec. nditionof3.0kWinputmicrowavepower.Thediamondfilmsaresuccessfullypreparedonsiliconsubstratesinthisapparatus.Keywords: MWPCVDapparatus, Steadyoperation, Microwavepower, Diamondfilms a 9n ~
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