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[rtrqdc69]

two sizes of mosaic structure map p wire electrode chip and the electrode in the middle of the diagonal expansion of the electrode chip basically the same iv characteristics, led sign n electrode wire electrode angle away from the electrode chip forward voltage drop at the same current, vf is higher than several other chips.
in terms of power type led module design, the use of existing power type led technology achievements, the single power-type led device (usually in the 3w or less) through the cluster approach, to expand the cooling area, neon sign cooling heat sink, thermal efficiency and other methods successful development of better heat dissipation, high efficiency led light module, in order to achieve a direct replacement indoor incandescent, halogen, fluorescent purpose.
well-known, led is a semiconductor product, if the led pin of the two pins or more components between the medium voltage exceeds the breakdown strength, it will cause damage to the device. the thinner oxide layer, the led message board ic and the greater the sensitivity of static, such as solder is not full, the quality of the solder itself, problems, etc., will have a serious leak paths, resulting in devastating damage. another failure was due to the node temperature exceeds the melting point of semiconductor silicon (1415 ℃) arising from. pulse energy can generate static electricity localized heating, resulting in the breakdown of the lamp and the ic directly to the fault.