 Wysłany: Czw 3:19, 07 Kwi 2011 Temat postu: 2010 Development of LED lighting industry, technic |
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| vi. chemical supply system: supplementary volume of chemical solution to high accuracy. vii. epitaxial wafers automatic transmission system: the wafer transfer can ensure a smooth transfer of consecutive 400 ru, led sign to ensure that the manufacturing yield rate. figure 12, hong plastic technology design automation of high-temperature wet etching phosphate production equipment 5, the conclusion of this paper has high temperature for the sapphiresubstrate phosphorylation
although the mosaic of 400μm & time500μm territory extended electrode area, for reducing the favorable p-type ohmic contact resistance, but increased the distance between the current transport, neon sign may increase the body resistance, the two effects offset the iv characteristics makes the chip smaller size of the mosaicof 350μm & time350μm similar chip layout. 350μm & time350μm diagonal layout with diagonal electrode, the measured iv characteristics show that the p electrode wire electrode and the distance n or less, chip mosaic iv characteristics of the electrode chip considerable. well-known, led is a semiconductor product, if the led pin of the two pins or more components between the medium voltage exceeds the breakdown strength, it will cause damage to the device. the thinner oxide layer, the led message board ic and the greater the sensitivity of static, such as solder is not full, the quality of the solder itself, problems, etc., will have a serious leak paths, resulting in devastating damage. another failure was due to the node temperature exceeds the melting point of semiconductor silicon (1415 ℃) arising from. pulse energy can generate static electricity localized heating, resulting in the breakdown of the lamp and the ic directly to the fault. |
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