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PostWysłany: Sob 14:47, 04 Gru 2010    Temat postu: tory burch MWPCVD Diamond Films and stable operati

MWPCVD Diamond Films unit stable operation of power


The expansion by the high voltage power supply output has now reached 5.5kw,tory burch, output power of the microwave magnetron at this time has reached 3. Okw a microwave input power the device up to 3.0kw at the time of continuous and stable operation for more than 30h, to meet the needs of Diamond Films. 3 experimental application of the diamond film deposition equipment, the N-type [100 silicon substrate of diamond film deposition on experimental substrates was enhanced nucleation pretreatment of the diamond powder with particle size W0.5 alcohol ultrasonic suspension , using the reaction of HI gas is diluted with CH. In the microwave input power of 1.0 ~ 30kW, CH concentration of 0.5% to 5%,ugg prezzo, gas flow 100em deposition pressure is 4.0 ~ 9.6kPa. Substrate temperature of 700 ~ 1100 ℃ in the process conditions, are able to deposit a layer of silicon chip of diamond film. Figure 5 (a) and (b) films were deposited by the Raman spectra and SEM photographs (deposition conditions: microwave input power 1.8kW.CH concentration of 1%, gas flow 100emS, deposition pressure 6.5kPa, the base chip temperature of 850 ℃, deposition time 12h), Raman spectroscopy is very strong in the diamond characteristic peak at 1332cm, and at 1550em at spj and s by a mixture of hybrid non-key box the characteristics of diamond phase carbon peak is very broad weak, indicating that the deposited film contains a large number of ounces of diamond; SEM images show particles deposited diamond films uniform and compact in size between the 1.5 ~ 2.5m, and a certain orientation, that of diamond deposited film quality is good. : Cb】 National 5 deposition film ~ arrJatl spectrum and SEM pictures 【a} cb} 4 Institute of Plasma Physics,ugg italia, Chinese Academy of Sciences has concluded successfully developed a water-cooled reaction chamber MWPCVD Diamond Films device. At present, the device when microwave input power 3Okw long and stable operation. L in the silicon wafer of diamond film deposited References: 『1] Detjagu [nBVFedcseevI] BSolA. 】 975.233l5: 102l2KanloM,ugg milano, SatoY. Matatlnl {) toS,tory burch shoes, eta 【J ('r3, rta] Gro ~ th.1983.62 (3): 642 [3] Lu Ao waste. Wu worship vacuum and low temperature,】 997,3 (2): 744] Wu Ming Man. Mao Xiuhua Microwave Technology, Shaanxi: Northwest Telecommunications Engineering Institute Publishing House .1987 l82: 5] Lebedev book, Han Jiarui. Baoxian Jie translation of microwave electronics Beijing: National Defence Industry Press .1982281 [6, Xu Fang Shengyan Modern Control Engineering, Beijing: Science Press Club 198】 StudyofSteadyOperationoftheMWPCVDApparatusforDiamondFilmsDepositiononHeavy-DutyShuXingsheng.WuQinchong (InstituteofPlasmaPhysics.ChineseAcademyofSciences, Hefei230031) AbstractThesetlJPandtheoperationtheoryofthereactionchamberwater-cooledMWPCVDapparatusfordiamondfilmsdepositi. nisconciselypresenled.andthemethodforitssteadyoperationonheavy-dutyforatongperiodoftime1semphaticaItvdiscussed.TheMWPCVDapparatuscallsteadilyoperateforalongperiodoftimeonthec. nditionof3.0kWinputmicrowavepower.Thediamondfilmsaresuccessfullypreparedonsiliconsubstratesinthisapparatus.Keywords: MWPCVDapparatus, Steadyoperation, Microwavepower, Diamondfilms a 9n ~

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